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Photonic thin films
Rare Earth doped glasses were deposited by PLD as active
waveguides for optical telecommunication devices.
Tellurites
The tellurium oxide based compounds
are investigated because allow a broader band emission of erbium ions
embedded in glass matrix.
Different used target
compositions:
1)
45%TeO2–39%WO3–15%Na2O–1%ErO3 (tungsten
tellurite)
2)
60%TeO2-20%ZnO-20%ZnCl2:1%ErCl3 (
zinc tellurite)
Surface
morphology of tungsten tellurite thin films by AFM measurement
Photoluminescence of tungsten tellurite thin films compared with the bulk
Chalcogenide
Chalcogenide
glass matrices were used to host Praseodymium ions for emission at 1.3
micron
Two different
compositions were prepared
1) 70GeS2-15Ga2S3-15CsI
2) 85GeS2-6Ga2S3-9CsI
with 2000 ppm (mol %) of Pr3+
SEM photo of the chalcogenide film
surface
Evaluation of the refraction index
n and extinction coefficient k of the chalcogenide films
Silicate
Thin films of Er3+-doped
Silicate glass have been prepared by Pulsed Laser Deposition technique using
an ArF pulsed excimer laser.
65%SiO2
– 3%Al2O3 – 11%Na2O – 10%PbF3
– 10%LaF3 – 1%ErF3
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Film with a
thickness up to 2 microns were deposited
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Optical
losses down to 1 dB/cm were measured
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The
photoluminescence of the Er ions was measured by a 980 nm optical pumping
Photoluminescence of the Er ions measured by a 980 nm pumping
Optical transmission of the deposited film
SEM
photo of the channel realized by Reactive Ion Etching
AFM image of the channel realized by Reactive Ion Etching
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